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IRFSL3607PBF Field Effect Transistor Transistors FETs MOSFETs Single

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Part Number : IRFSL3607PBF

Manufacturer : Infineon Technologies

Description : MOSFET N-CH 75V 80A TO-262

Category : Transistors - FETs, MOSFETs - Single

Family : Transistors - FETs, MOSFETs - Single

Series : HEXFET®

Place of Origin : Original

MOQ : Negotiable

Price : Negotiable

Delivery Time : Negotiable

Payment Terms : T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 100000

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Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	75V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	84nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	3070pF @ 50V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	140W (Tc)
Rds On (Max) @ Id, Vgs	9 mOhm @ 46A, 10V
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-262
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Shipment	UPS/EMS/DHL/FedEx Express.
Condtion	New original factory.

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IRFSL3607PBF Field Effect Transistor Transistors FETs MOSFETs Single

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