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SIHD12N50E-GE3 Field Effect Transistor Transistors FETs MOSFETs Single

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Part Number : SIHD12N50E-GE3

Manufacturer : Vishay Siliconix

Description : MOSFET N-CHAN 500V DPAK

Category : Transistors - FETs, MOSFETs - Single

Family : Transistors - FETs, MOSFETs - Single

Series : E

Place of Origin : Original

MOQ : Negotiable

Price : Negotiable

Delivery Time : Negotiable

Payment Terms : T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 100000

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Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	550V
Current - Continuous Drain (Id) @ 25°C	10.5A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	50nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	886pF @ 100V
Vgs (Max)	±30V
FET Feature	-
Power Dissipation (Max)	114W (Tc)
Rds On (Max) @ Id, Vgs	380 mOhm @ 6A, 10V
Operating Temperature	-55°C ~ 150°C (TA)
Mounting Type	Surface Mount
Supplier Device Package	D-PAK (TO-252AA)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Shipment	UPS/EMS/DHL/FedEx Express.
Condtion	New original factory.

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SIHD12N50E-GE3 Field Effect Transistor Transistors FETs MOSFETs Single

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